ait s emiconductor inc. www.ait - ic.com a m 230 5 mosfet - 3 0v p - channel enhancement mode rev1.0 - nov 2010 releas ed C - 1 - description features the am 2305 is the p - channel logic enhancement mode power field effect transistor is produced using high cell density. a dvanced trench technology to provide excellent r ds(on) . this high density process is especially tailored to minimi ze on - state resistance. these devices are particularly suited for low voltage application, and low in - line power loss are needed in a very small outline surface mount package. AM2305 is available in a sot - 23 package. ? - 30v/ - 4a, r ds(on) = 55m@v gs = - 10v ? - 30v/ - 3a, r ds(on) = 64m@v gs = - 4.5v ? - 30v/ - 2a, r ds(on) = 85m@v gs = - 2.5v ? super high density cell design for extremely low r ds(on) ? exceptional on - resistance and maximum dc current capability ? a vailable in a sot - 23 package . application ? high frequency point - of - load synchronous ? new working dc - dc power system ? load switch p c hannel mosfet ordering information package type part number sot - 23 e3 AM2305 e3r AM2305 e3vr note r: tape & reel v: green package ait provi des all pb free products suffix v means green package www.datasheet.co.kr datasheet pdf - http://www..net/
ait s emiconductor inc. www.ait - ic.com a m 230 5 mosfet - 3 0v p - channel enhancement mode rev1.0 - nov 2010 releas ed C - 2 - pin description top view pin # symbol function 1 g gate 2 s source 3 d drain www.datasheet.co.kr datasheet pdf - http://www..net/
ait s emiconductor inc. www.ait - ic.com a m 230 5 mosfet - 3 0v p - channel enhancement mode rev1.0 - nov 2010 releas ed C - 3 - absolute maximum ratings t a = 25 unless otherwise specified v dss , drain - source voltage - 30v v gss , gate - source voltage 12 v i d , continuous drain current , v gs =10v notea t a =25c - 4 a i dm , pulsed drain current noteb - 12a p d , power dissipation t a =25c 1.25 w t a =70c 0.8 w t j , operation junction temperature - 55/150 c t stg , storage temperature range - 55/150c stress beyond above listed absolute maximum ratings may lead permanent damage to the device. these are stress ratings only and operations of the device at these or any other condi tions beyond those indicated in the operational sections of the specifications are not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. n ote a : the value of r ja is measured with the device mounted on 1in 2 fr - 4 board with 2oz. copper, in a still air environment with t a =25 c. n ote b : the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% thermal data parameter symbol max unit thermal resistance - jun ction to ambient r ja 120 c/w thermal resistance - junction to case r jc 65 c/w www.datasheet.co.kr datasheet pdf - http://www..net/
ait s emiconductor inc. www.ait - ic.com a m 230 5 mosfet - 3 0v p - channel enhancement mode rev1.0 - nov 2010 releas ed C - 4 - electrical characteristics t a = 25 unless otherwise specified parameter symbol conditions min typ . max units static parameters drain - source breakdown voltage v (br)dss v gs =0v,i d = - 250a - 20 - - v gate threshold voltage v gs(th) v ds =v gs ,i d = - 250a - 0. 6 - - 1. 2 v gate leakage current i gss v ds =0v,v gs =12v - - 100 na zero gate voltage drain current i dss v ds = - 2 4 v,v gs =0v - - - 1 a v ds = - 2 4 v,v gs =0v t j =55c - - - 10 drain - sour ce on - resistance r ds(on) v gs = - 10 v,i d = - 4.0 a - 55 58 m v gs = - 4 .5v,i d = - 3 .0a - 64 68 v gs = - 2 .5v,i d = - 2 .0a - 85 95 forward transconductance g fs v ds = - 5v,i d = - 4.0 a - 10 - s source - drain d io de diode forward voltage v sd i s = - 1. 0 a,v gs =0v - - 0.7 - 1. 0 v dynami c parameters total gate charge q g v ds = - 1 5 v v gs = - 10 v i d - 4.0 a - 7 - nc gate - source charge q gs - 1 3 - gate - drain charge q gd - 1.8 - input capacitance c iss v ds = - 1 5 v v gs =0v f=1mhz - 680 - pf output capacitance c oss - 320 - reverse transfer capacita nce c rss - 65 - turn - on time t d(on) v dd = - 1 5 v r l =1 5 i d = - 1 a v gen = - 10 v r g =6 - 12 18 ns t r - 3 7 turn - off time t d(off) - 34 42 t f - 3 7 www.datasheet.co.kr datasheet pdf - http://www..net/
ait s emiconductor inc. www.ait - ic.com a m 230 5 mosfet - 3 0v p - channel enhancement mode rev1.0 - nov 2010 releas ed C - 5 - typical characteristics 1. output characteristics 2. drain - source on resistance 3. drain source on resistance 4. transfer characteristics 5. gate charge 6. drain source resistance www.datasheet.co.kr datasheet pdf - http://www..net/
ait s emiconductor inc. www.ait - ic.com a m 230 5 mosfet - 3 0v p - channel enhancement mode rev1.0 - nov 2010 releas ed C - 6 - 7. source drain diode forward 8. capacitance 9. power dissipation 10. drain current 11. thermal transient impedance www.datasheet.co.kr datasheet pdf - http://www..net/
ait s emiconductor inc. www.ait - ic.com a m 230 5 mosfet - 3 0v p - channel enhancement mode rev1.0 - nov 2010 releas ed C - 7 - package information dimension in sot - 23 package (unit: mm) symbol min max a 1.050 1.250 a1 0.000 0.100 a2 1.050 1.150 b 0.300 0.500 c 0.100 0.200 d 2.820 3.020 e 1.500 1.700 e1 2.650 2.950 e 0.950(bsc) e1 1.800 2.000 l 0.300 0.600 0 8 www.datasheet.co.kr datasheet pdf - http://www..net/
ait s emiconductor inc. www.ait - ic.com a m 230 5 mosfet - 3 0v p - channel enhancement mode rev1.0 - nov 2010 releas ed C - 8 - important notice ait semiconductor inc. (ait) reserves the right to make changes to any its product, specifications , to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. ait semiconductor inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. use of ait products in such applications is understood to be f ully at the risk of the customer. as used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. in order to minimize risks associated with the customer's applications, the customer should provide adequa te design and operating safeguards. ait semiconductor inc . assumes to no liability to customer product design or application support. ait warrants the performance of its products of the specifications applicable at the time of sale. www.datasheet.co.kr datasheet pdf - http://www..net/
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